algainp led sepcification chip
wafer led arancio substrato:
\u0026 EMSP;
\u0026 EMSP;
p + GaAs
\u0026 EMSP;
\u0026 EMSP;
\u0026 EMSP;
\u0026 EMSP;
p-gap
\u0026 EMSP;
\u0026 EMSP;
\u0026 EMSP;
\u0026 EMSP;
p-AlGaInP
\u0026 EMSP;
\u0026 EMSP;
\u0026 EMSP;
\u0026 EMSP;
MQW
\u0026 EMSP;
\u0026 EMSP;
\u0026 EMSP;
\u0026 EMSP;
n-AlGaInP
\u0026 EMSP;
\u0026 EMSP;
\u0026 EMSP;
\u0026 EMSP;
dbr n-AlGaAs / ahimè
\u0026 EMSP;
\u0026 EMSP;
\u0026 EMSP;
buffer
\u0026 EMSP;
\u0026 EMSP;
\u0026 EMSP;
\u0026 EMSP;
substrato gaas
\u0026 EMSP;
\u0026 EMSP;
\u0026 EMSP;
\u0026 EMSP;
·patata fritta sepcification (base su chip 7mil * 7mil)
parametro
\u0026 EMSP;
\u0026 EMSP;
dimensione del chip
7mil (± 1 mil) * 7mil (± 1mil)
spessore
7mil (± 1mil)
elettrodo p
u / l
\u0026 EMSP;
n elettrodo
au
\u0026 EMSP;
struttura
ad esempio destro mostrato
· Ottica-elctric personaggi
\u0026 EMSP;
\u0026 EMSP;
\u0026 EMSP;
parametro
condizione
min.
tip
max.
unità
tensione diretta
io f = 10μa
1.35
┄
┄
v
Tensione inversa
io f = 20mA
┄
┄
2.2
v
corrente inversa
v = 10v
┄
┄
2
micron
lunghezza d'onda
io f = 20mA
565
┄
575
nm
mezza larghezza d'onda
io f = 20mA
┄
10
┄
nm
·intensità luminosa personaggi
\u0026 EMSP;
\u0026 EMSP;
\u0026 EMSP;
\u0026 EMSP;
\u0026 EMSP;
\u0026 EMSP;
codice di luminosità
la
libbre
lc
ld
Le
lf
lg
LH
iv (mcd)
10-15
15-20
20-25
25-30
30-35
35-40
40-50
50-60
fonte: semiconductorwafers.net
per ulteriori informazioni, si prega di visitare il nostro sito: http://www.semiconductorwafers.net ,
mandaci una email a angel.ye@powerwaywafer.com o powerwaymaterial@gmail.com .
informazioni sui contatti
luna@powerwaywafer.compowerwaymaterial@gmail.com 
+86-592-5601 404
