chi siamo

come il produttore principale di materiale semiconduttore composto in Cina. pam-xiamen sviluppa avanzate tecnologie di crescita dei cristalli e di epitassia, spaziano dalla prima generazione di wafer al germanio, all'arseniuro di gallio di seconda generazione con crescita del substrato ed epitassia 6
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dopo più di 20 anni di accumulo e sviluppo, la nostra azienda ha un evidente vantaggio nell'innovazione tecnologica e nel pool di talenti. in futuro, dobbiamo accelerare il ritmo delle azioni concrete per fornire ai clienti prodotti e servizi migliori
dottore chan -CEO di xiamen powerway advanced material co., ltd

i nostri prodotti

laser blu

modelli di gan

I prodotti del modello di pam-xiamen sono costituiti da strati cristallini di nitruro di gallio (gan), nitruro di alluminio (aln), nitruro di gallio di alluminio (algan) e nitruro di gallio indio (ingan), che si depositano su substrati di zaffiro, i modelli di carburo di silicio o di silicon.pam-xiamen consentono tempi di ciclo epitassiale più brev6

gan su silicio

substrato gan indipendente

pam-xiamen ha stabilito la tecnologia di produzione per wafer di substrato gan indipendente (nitruro di gallio), che è per uhb-led e ld. cresciuto con tecnologia di epitassia a fase di vapore idruro (hvpe), il nostro substrato gan ha una bassa densità di difetti.

cristallo di gaas

wafer di gaas (arseniuro di gallio)

pwam sviluppa e produce substrati semiconduttori composti: cristallo di arseniuro di gallio e wafer. Abbiamo utilizzato tecnologie avanzate per la crescita dei cristalli, il congelamento con gradiente verticale (vgf) e il gaas wafer, stabilito una linea di produzione dalla crescita dei cristalli, taglio, molatura alla lavorazione della lucidatura e6

cristallo sic

sic epitaxy

forniamo su misura film sottile personalizzato (carburo di silicio) sicità su substrati 6h o 4h per lo sviluppo di dispositivi in ​​carburo di silicio. sic epi wafer viene utilizzato principalmente per diodi schottky, transistor a effetto di campo a semiconduttore a ossido di metallo, transistor a effetto di campo a giunzione, transistor a giunzion6

cristallo sic

substrato sic

pam-xiamen offre wafer in carburo di silicio a semiconduttore, 6h sic e 4h sic in diversi gradi di qualità per ricercatore e produttori industriali. abbiamo sviluppato la tecnologia di crescita del cristallo sic e la tecnologia di trattamento del cristallo sic sic, ha stabilito una linea di produzione per substrato produttore sic, che viene applica6

gan expitaxy

wafer epitassiale a base di gan

Il wafer epitassiale a base di gan (ossido di gallio) di pam-xiamen è per i diodi a emissione luminosa (LED) e diodi laser (ld) ad altissima luminosità blu e verde.

gan hemt epitaxy

gan hemt epitaxial wafer

i nuclei di nitruro di gallio (gan) (transistori ad alta mobilità elettronica) sono la prossima generazione della tecnologia dei transistor di potenza RF. Grazie alla tecnologia gan, pam-xiamen ora offre wafer algan / gan hemt epi su zaffiro o silicio e algan / gan su modello zaffiro .

cristallo sic

sic wafer reclaim

pam-xiamen è in grado di offrire i seguenti servizi di wafer reclaim sic.

perché sceglierci

  • supporto tecnologico gratuito e professionale

    puoi ottenere il nostro servizio gratuito di tecnologia dall'inchiesta al servizio post-vendita basato sul nostro 25+ esperienze nella linea dei semiconduttori.

  • buon servizio di vendita

    il nostro obiettivo è soddisfare tutte le vostre esigenze, non importa quanto piccoli ordini e come domande difficili possono essere, per mantenere una crescita sostenuta e redditizia per ogni cliente attraverso i nostri prodotti qualificati e un servizio soddisfacente.

  • Più di 25 anni di esperienza

    con più di 25 + anni esperienze nel settore dei materiali compositi semiconduttori e nelle attività di esportazione, il nostro team può assicurarvi che siamo in grado di comprendere le vostre esigenze e affrontare il vostro progetto professionalmente.

  • qualità affidabile

    la qualità è la nostra prima priorità. pam-xiamen è stato ISO9001: 2008 , possiede e condivide quattro moderne aziende che possono fornire una vasta gamma di prodotti qualificati per soddisfare le diverse esigenze dei nostri clienti, e ogni ordine deve essere gestito attraverso il nostro rigoroso si6

"abbiamo utilizzato i power epi wafer per alcuni dei nostri lavori. Siamo molto colpiti dalla qualità dell'epi"
james s.speck, dipartimento dei materiali dell'università della california
2018-01-25
"cari team pam-xiamen, grazie per la vostra opinione professionale, il problema è stato risolto, siamo così felici di essere il vostro partner"
raman k. chauhan, seren photonics
2018-01-25
"grazie per la rapida risposta delle mie domande e il prezzo competitivo, è molto utile per noi, ordineremo di nuovo presto"
Markus Sieger, Università di Ulm
2018-01-25
"I wafer in carburo di silicio sono arrivati ​​oggi, e siamo davvero contenti di loro! Il pollice in su al tuo staff di produzione!"
Dennis, università di Exeter
2018-01-25

le università e le aziende più famose del mondo si fidano di noi

ultime notizie

Overview of recent direct wafer bonding advances and applications

2019-09-18

Direct wafer bonding processes are being increasingly used to achieve innovative stacking structures. Many of them have already been implemented in industrial applications. This article looks at direct bonding mechanisms, processes developed recently and trends. Homogeneous and heterogeneous bonded structures have been successfully achieved with various materials. Active, insulating or conductive materials have been widely investigated. This article gives an overview of Si and SiO2 direct wafer bonding processes and mechanisms, silicon-on-insulator type bonding, diverse material stacking and the transfer of devices. Direct bonding clearly enables the emergence and development of new applications, such as for microelectronics, microtechnologies, sensors, MEMs, optical devices, biotechnologies and 3D integration. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@g...

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Japanese Journal of Applied Physics logo A Novel Diffusion Resistant P-Base Region Implantation for Accumulation Mode 4H–SiC Epi-Channel Field Effect Transistor

2019-09-11

A novel implantation technique using the carbon (C) and boron (B) sequential implantation is employed to control the B lateral and vertical diffusion from the p-base region of the planar silicon carbide (SiC) epi-channel field effect transistor (ECFET). The current deep level transient spectroscopy measurements were performed to establish the inter-correlation between the B enhanced diffusion and the electrically active defects introduced by the C and B sequential implantation. It was found that the formation of deep defect level is completely suppressed for the same ratio (C:B=10:1) as that for the B diffusion in 4H–SiC. A diffusion mechanism which is correlated to the formation of D center was proposed to account for the experimentally observed B enhanced diffusion. The effectiveness of C and B implantation technique in suppressing the junction field effect transistor (JFET) pinch effect is clearly visible from the 3–4 fold increase in drain current of fabricated 4H–SiC ECFET for p-b...

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Adding a Bit of Artificiality Makes Graphene Real for Electronics

2019-08-28

 We believes that one of the electronic capabilities for this device could be selecting the strength of the spin-orbit coupling in a p-type GaAs quantum well. This could lead to the creation of a topological insulator, which is an insulator on the inside but a conductor on the outside. Such an insulator could in turn enable so-called topological quantum computation, which is a theoretical approach to quantum computing that could be far more robust than current methods. This capability does not exist in natural graphene or other artificial graphene systems. Source:.ieee For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Two inch GaN substrates fabricated by the near equilibrium ammonothermal (NEAT) method

2019-08-19

This paper reports two inch gallium nitride (GaN) substrates fabricated from bulk GaN crystals grown in the near equilibrium ammonothermal method. 2'' GaN wafers sliced from bulk GaN crystals have a full width half maximum of the 002 X-ray rocking curve of 50 arcsec or less, a dislocation density of mid-105 cm−2 or less, and an electron density of about 2 × 1019 cm−3. The high electron density is attributed to an oxygen impurity in the crystal. Through extensive surface preparation, the Ga surface of the wafer shows an atomic step structure. Additionally, removal of subsurface damage was confirmed with grazing angle X-ray rocking curve measurements from the 114 diffraction. High-power p–n diode structures were grown with metalorganic chemical vapor deposition. The fabricated devices showed a breakdown voltage of over 1200 V with sufficiently low series resistance. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at s...

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Enhancement of the quality of InAsSb epilayers using InAsSb graded and InSb buffer layers grown by hot wall epitaxy

2019-08-12

We have investigated the structural and electrical properties of InAsxSb1−x epilayers grown on GaAs(0 0 1) substrates by hot wall epitaxy. The epilayers were grown on an InAsSb graded layer and an InSb buffer layer. The arsenic composition (x) of the InAsxSb1−x epilayer was calculated using x-ray diffraction and found to be 0.5. The graded layers were grown with As temperature gradients of 2 and 0.5 °C min−1. The three-dimensional (3D) island growth due to the large lattice mismatch between InAsSb and GaAs was observed by scanning electron microscopy. As the thicknesses of the InAsSb graded layer and the InSb buffer layer are increased, a transition from 3D island growth to two-dimensional plateau-like growth is observed. The x-ray rocking curve measurements indicate that full-width at half-maximum values of the epilayers were decreased by using the graded and buffer layers. A dramatic enhancement of the electron mobility of the grown layers was observed by Hall effect measurements. So...

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Quality Variation of ZnSe Heteroepitaxial Layers Correlated with Nonuniformity in the GaAs Substrate Wafer

2019-08-06

ZnSe layers are grown heteroepitaxially on substrates cut from a LEC-grown, undoped semi-insulating GaAs(100) wafer along the diameter parallel to the [001] axis. The intensities of free-exciton photoluminescence and X-ray diffraction from the ZnSe layers show an M-shaped profile along the GaAs wafer diameter, and are inversely correlated with the etch-pit-density distribution of the GaAs wafer. This observation gives, for the first time, experimental evidence that the quality of ZnSe heteroepitaxial layers grown by recent epitaxial techniques can be limited by the quality of GaAs substrates. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy

2019-07-29

Smooth and fully relaxed highly boron-doped germanium layers were grown directly on Si(001) substrates using carbon-mediated epitaxy. A doping level of  was measured by several methods. Using high-resolution x-ray diffraction we observed different lattice parameters for intrinsic and highly boron-doped samples. A lattice parameter of a Ge:B = 5.653 Å was calculated using the results obtained by reciprocal space mapping around the (113) reflection and the model of tetragonal distortion. The observed lattice contraction was adapted and brought in accordance with a theoretical model developed for ultra-highly boron-doped silicon. Raman spectroscopy was performed on the intrinsic and doped samples. A shift in the first order phonon scattering peak was observed and attributed to the high doping level. A doping level of  was calculated by comparison with literature. We also observed a difference between the intrinsic and doped sample in the range of second order phonon scattering. ...

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Epitaxial CdS Layers Deposited on InP Substrates

2019-07-22

The CdS layers were deposited on InP substrates by using the (H2–CdS) vapor growth technique. The single crystal layers of hexagonal CdS were obtained on InP (111), (110) and (100) with the following heteroepitaxial relationships; (0001) CdS//(111) InP and [bar 12bar 10] CdS//[01bar 1] InP, (01bar 13) CdS//(110) InP and [bar 2110] CdS//[bar 110] InP, (30bar 34) CdS//(100) InP and [bar 12bar 10] CdS//[01bar 1] InP. The CdS layers deposited on InP (bar 1bar 1bar 1) were identfied in terms of the twinned hexagonal crystals, twin planes of which were nearly parallel to (30bar 3bar 4) and its crystallographic equivalents. The compositional gradients were observed at the interface of the deposits and the substrates. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Absorption and dispersion in undoped epitaxial GaSb layer

2019-07-16

In this paper, we present the results of a theoretical and experimental investigation into the refractive index and absorption, at room temperature, of a 4 μm-thick undoped epitaxial layer of GaSb deposited on a GaAs substrate. A theoretical formula for optical transmission through an etalon was derived, taking into account the finite coherence length of the light. This formula was used to analyse the measured transmission spectra. The refractive index was determined in a wide spectral range, between 0.105 eV and 0.715 eV. The absorption was determined for photon energies between 0.28 eV and 0.95 eV. An Urbach tail was observed in the absorption spectrum, as well as a constant increase in absorption in the spectral region above the band gap. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Study on Cd vacancy in CdZnTe Crystal by Positron Annihilation Technology

2019-07-08

Cd vacancies in cadmium zinc telluride(CdZnTe) crystals have an important effect on the crystal properties. In this paper, position distribution and concentration change of Cd vacancy in CdZnTe crystal grown by the temperature gradient solution growth (TGSG) were investigated by positron annihilation technology (PAT), which was based on the potential energy distribution and probability density of the positron in the crystal. The results showed that, the density of Cd vacancy increased obviously from the first-to-freeze to stable growth of the ingots, while decreased along the radial direction of the ingots. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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