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InGaAsN epitaxially on GaAs or InP wafers

ingaasn epitassialmente su gaas o wafer inp

InGaAsN epitaxially on GaAs or InP wafers

2018-01-16

PAM-XIAMEN provides InGaAsN epitaxially on GaAs or InP wafers as follows:


Layer

Doping

Thickness (um)                      

 Remark

GaAs 

 undoped

~500  

<001> wafer substrate

InGaAsN*

  undoped 

                0.150                  

band gap <1 eV

Al(0.3)Ga(0.7)As

 undoped

0.5

GaAs

  undoped

2

Al(0.3)Ga(0.7)As

  undoped 

0.5

 

ITEM

x/y

Doping

carrier conc.(cm3)

Thicknessum

wave length(um)

Lattice mismatch

InAs(y)P

0.25

none

5.0*10^16

1.0

-

In(x)GaAs

0.63

none

1.0*10^17

3.0

1.9

600<>600

InAs(y)P

0.25

S

1.0*10^18

205.0

-

InAs(y)P

0.05->0.25

S

1.0*10^18

4.0

-

InP

-

S

1.0*10^18

0.3

-


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